Mitsubishi Electric said it will begin shipping samples of its fifth-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) later this month, as automakers seek more efficient power electronics to improve the performance and range of electrified vehicles.
The new devices, which will be supplied in bare die form starting in late June, are designed for use in drive motor inverters and eAxle systems in battery-electric and hybrid vehicles. The company said the fifth-generation products deliver approximately 25% lower on-resistance than their fourth-generation counterparts, a performance improvement that can help reduce energy losses in vehicle powertrains.
Focus on Inverter Efficiency
Silicon carbide semiconductors are increasingly being adopted in electric vehicle inverters because of their ability to operate more efficiently than conventional silicon-based devices. Lower on-resistance reduces the amount of power lost during switching operations, helping automakers improve vehicle efficiency and potentially extend driving range.
Mitsubishi Electric said its latest SiC-MOSFETs utilize a proprietary trench structure that lowers resistance between the drain and source terminals during operation. Compared with the company’s fourth-generation trench SiC-MOSFETs at equivalent voltage and threshold ratings, the new devices achieve a roughly 25% reduction in on-resistance.
The company said the improvement directly contributes to lower inverter power losses while supporting the development of smaller and lighter powertrain components.
Designed for Long-Term Durability
In addition to efficiency gains, Mitsubishi Electric said it has developed a proprietary manufacturing process that helps suppress long-term degradation and fluctuations in on-resistance and power loss over time.
The approach is intended to address durability requirements in automotive applications, where power semiconductors are subjected to repeated thermal and electrical stresses throughout a vehicle’s operating life.
The fifth-generation SiC-MOSFETs will be offered in two bare die configurations, with sample shipments scheduled to begin sequentially from late June 2026.
Growing Importance of Silicon Carbide in EVs
The launch comes as competition among semiconductor suppliers intensifies in the silicon carbide market, a technology segment increasingly viewed as critical to improving electric vehicle efficiency and extending range.
As automakers continue to prioritize higher efficiency and more compact powertrain architectures, advancements in silicon carbide devices are becoming a key factor in inverter performance and overall vehicle energy consumption.
Mitsubishi Electric plans to showcase the new fifth-generation SiC-MOSFETs at the PCIM Expo & Conference 2026 in Nuremberg, Germany, from June 9 to June 11, alongside additional exhibitions in Japan and China.