Infineon Technologies has produced its first functional silicon carbide (SiC) power devices using 300-millimeter wafers under real production conditions at its facility in Villach, Austria. The development marks a step towards scaling semiconductor manufacturing for electric vehicles, charging infrastructure and other power electronics applications.
The German semiconductor manufacturer said it processed the larger wafers using existing production equipment that can also handle conventional silicon wafers. Infineon described the achievement as a first for the semiconductor industry, although it has not yet announced a timetable for commercial-scale 300 mm SiC production.
Larger Wafers Could Increase SiC Chip Output
Moving from 200 mm to 300 mm wafers offers a significant manufacturing advantage. According to Infineon, a 300 mm wafer can produce approximately 2.3 times as many chips as a 200 mm wafer, creating opportunities to improve production efficiency and increase output.
The company plans to determine the timing of a production ramp-up in coordination with customers and industry partners. In the meantime, it will continue implementing its existing roadmap for 200 mm SiC manufacturing.
The transition could become increasingly important as demand for power semiconductors grows across automotive, energy and industrial markets. However, Infineon has not provided specific estimates for potential reductions in component manufacturing costs.
SiC Technology Supports Electric Vehicle Powertrains
Silicon carbide is a wide-bandgap semiconductor material that offers advantages over conventional silicon, including lower power losses, higher power density and improved performance at high voltages and temperatures.
These characteristics make SiC particularly relevant to electric vehicle powertrain systems. Applications include traction inverters, onboard chargers and high-power charging stations, where improved power conversion efficiency can support vehicle performance and charging capabilities.
The technology is also used in stationary energy storage systems and industrial electric drives. Increasing production efficiency could therefore help semiconductor suppliers address demand across several markets as electrification expands.
Infineon Develops More Efficient 300 mm SiC Wafer Production
Alongside device manufacturing, Infineon is working to improve how SiC wafers are produced. At its Dresden site in Germany, the company has successfully tested cold-split technology for 300 mm SiC wafers.
The process separates wafers from a silicon carbide crystal with less material loss and shorter processing times than conventional wire sawing. This could increase the number of usable wafers obtained from each crystal while improving manufacturing efficiency.
Combining more efficient wafer production with larger-scale device manufacturing could help address some of the production challenges associated with expanding SiC supply.
300 mm Strategy Extends Across Power Semiconductor Materials
The latest SiC achievement builds on Infineon’s broader investment in 300 mm semiconductor manufacturing at Villach. The company has already been preparing the transition from 200 mm to 300 mm wafers for gallium nitride (GaN) production.
At the end of October, Infineon announced plans to invest approximately €1.1 billion in its Villach facility by 2034. High-volume production of GaN power semiconductors using 300 mm wafers is scheduled to begin at the end of 2027.
With the latest SiC milestone, Infineon is extending its larger-wafer manufacturing strategy to another wide-bandgap semiconductor material. The company now manufactures power semiconductors based on silicon, gallium nitride and silicon carbide, with 300 mm technology forming part of its production strategy across all three materials.