Toshiba Electronics Europe has introduced the XPJ1R504PB, a new automotive-qualified N-channel MOSFET designed for 12-volt vehicle electrical systems.
The device is compliant with the AEC-Q101 automotive reliability standard and is intended for applications including inverters, semiconductor relays, load switches and motor drives.
Designed for Automotive Power Applications
The XPJ1R504PB is rated at 40 volts and 120 amps and is packaged in Toshiba’s S-TOGL package.
According to the company, the package uses gull-wing leads to help reduce mounting stress and improve solder joint reliability under the temperature variations commonly experienced in automotive environments.
The MOSFET also incorporates a post-less structure that integrates the source electrode connection with the external leads, reducing parasitic resistance.
Toshiba said the device achieves a maximum on-resistance (RDS(on)) of 1.54 milliohms at a gate-source voltage of 10 volts.
Improved Thermal Performance
The S-TOGL package incorporates a thick copper frame to improve heat dissipation.
According to Toshiba, the design reduces the transient thermal impedance between the channel and the package case to 0.76°C/W, helping lower conduction losses and reduce heat generation during operation.
The company added that a multi-pin source lead structure improves current distribution and supports the device’s 120-amp current rating.
Expanding the S-TOGL Portfolio
The XPJ1R504PB joins Toshiba’s existing XPJR6604PB and XPJ1R004PB MOSFETs within the S-TOGL family, providing additional voltage options for automotive system designers.
Toshiba said the expanded product range is intended to support increasing demand for compact, thermally efficient power semiconductors as vehicle electrification drives wider adoption of inverters, electric motor drives and other high-current automotive systems.