Japanese semiconductor company Rohm and Taiwanese chipmaker TSMC have formed a strategic alliance to develop and mass-produce gallium nitride (GaN) power devices for electric vehicle (EV) applications. This collaboration combines Rohm’s expertise in device development with TSMC’s advanced GaN-on-silicon process technology, aiming to create efficient and environmentally friendly solutions for automotive systems like on-board chargers and inverters.
The use of GaN semiconductors in EV applications has gained significant attention for their energy-saving and miniaturization capabilities. These features position GaN as a key technology for advancing decarbonization efforts. Katsumi Azuma, Senior Managing Executive Officer at Rohm, highlighted the partnership’s importance, stating, “Reliable partners are crucial for implementing these innovations in society, and we are pleased to collaborate with TSMC, which possesses world-leading advanced manufacturing technology.”
Both companies are expanding their manufacturing capacities to support growing demand. TSMC recently began construction of a production facility in Dresden, Germany, while Rohm is building its largest manufacturing plant to date in Kunitomi, Japan. These initiatives align with broader efforts to diversify semiconductor production and reduce dependence on Taiwan, a current hub for global chip manufacturing.
The automotive industry is increasingly exploring GaN technology as an alternative to silicon carbide (SiC) semiconductors. GaN devices are valued for their potential cost-effectiveness and system efficiency, as noted in past collaborations such as Vitesco’s partnership with Canada-based GaN Systems. Similarly, EU-led projects like ALL2GaN aim to accelerate the integration of GaN semiconductors across various applications, further emphasizing the technology’s growing significance in achieving sustainable and efficient energy systems.
By providing user-friendly GaN solutions, including control integrated circuits, Rohm and TSMC are positioning themselves at the forefront of this transformative shift in semiconductor technology, particularly for EV applications.
