Semiconductor manufacturer Onsemi has unveiled nine new versions of its EliteSiC Power Integrated Modules (PIMs), aimed at facilitating bidirectional charging for DC ultra-fast electric vehicle (EV) chargers and energy storage systems.
These silicon carbide-based solutions, deemed more efficient than traditional silicon-based semiconductors, offer potential cost reductions for IGBT power modules.
The technology boasts simplified cooling mechanisms, contributing to a 40% reduction in module size and a 52% decrease in weight compared to conventional silicon-based IGBT solutions. Utilizing Gen3 M3S SiC MOSFET technology, these PIMs feature improved switching efficiency, directly leading to reduced power consumption. Supporting scalable output power ranging from 25 kW to 100 kW, the EliteSiC PIMs enable various DC fast charging and energy storage system platforms.
Onsemi's expanded portfolio provides designers with flexibility in selecting the appropriate PIM for power conversion stages in DC fast charging or energy storage system applications. Additionally, the company is making its piecewise linear electrical circuit simulation (PLECS) model generator and application simulations available to designers, aiming to accelerate the design cycle.
Having secured supply agreements with key players in the automotive industry, including Volkswagen, BMW, Vitesco, Stellantis Group, and Geely's Zeekr, Onsemi's silicon carbide semiconductors continue to gain traction in the market. Austrian-based automotive supplier Magna has also announced its integration of Onsemi's SiC semiconductors.