Japanese chipmaker Rohm has introduced a new compact silicon carbide (SiC) power module for electric vehicles, designed to improve performance, reliability, and integration in onboard chargers. The HSDIP20 package incorporates the company’s fourth-generation SiC MOSFETs and is targeted at high-power automotive applications such as power factor correction (PFC) and DC/DC conversion.
The module, which measures 38 x 31.3 x 3.5 mm, integrates four or six MOSFETs into a single package and is available in configurations supporting 7 to 22 kW power levels. According to Rohm, the HSDIP20 achieves industry-leading current density, allowing for faster EV charging while reducing the mounting area by up to 52% compared to conventional discrete solutions.
See also: Mazda and Rohm Partner to Develop Next-Generation GaN Power Semiconductors for Electric Vehicles
“All basic circuits required for power conversion in various high-power applications are integrated into a compact module package,” the company said in a statement. “This reduces the design workload for manufacturers and enables the miniaturization of power conversion circuits in onboard chargers and other applications.”
Rohm’s SiC technology also eliminates the need for additional insulation sheets due to improved thermal characteristics. The company reported that the HSDIP20 package runs approximately 38°C cooler under 25W operation than traditional top-side-cooled discrete solutions, thanks to the use of high thermal conductivity ceramic fillers.
See also: Rohm and TSMC Partner to Advance Gallium Nitride Power Devices for EVs
As EVs evolve to support longer driving ranges and faster charging, the demand for high-density, lightweight power electronics is growing. Rohm says its latest package delivers over three times the power density of top-side cooled discrete components and 1.4 times that of similar dual in-line packages (DIP), helping automakers meet these evolving requirements.