California-based GaN semiconductor manufacturer, NexGen Power Systems, has announced that it has been awarded funding by the US Department of Energy for its collaborative project with General Motors. The project aims to advance the development of electric drive systems, with a focus on improving efficiency, performance, and sustainability in electric vehicles. NexGen will leverage its Vertical GaN semiconductors to drive innovation in power electronics design, motor integration, thermal management, and system-level optimization.
In a recent update shared in February 2023, NexGen unveiled the availability of engineering samples for its 700V and 1200V semiconductors. Notably, the company’s current generation 1200V, 1 Ohm, Vertical GaN e-mode Fin-jFETs have showcased impressive capabilities, including over 1 MHz switching at a rated voltage of 1.4kV. This technological advancement serves as a foundation for the joint development project announced today.
Shahin Sharifzadeh, Chief Executive Officer of NexGen, expressed enthusiasm about the collaboration, stating, “We are excited that the DoE award gives us the opportunity to develop GaN-based electric drive systems with a leading automotive manufacturer like General Motors. This collaboration will help us introduce Vertical GaN-based inverter drive systems to the electric vehicle market and will enable automakers to enhance range, reduce weight, and improve system reliability.”
The funding provided by the US Department of Energy will facilitate the joint efforts of NexGen Power Systems and General Motors in revolutionizing electric drive systems. This collaboration represents a significant step towards the future of sustainable transportation, as advancements in power electronics and semiconductor technologies continue to drive innovation in the electric vehicle industry.
