Mitsubishi Electric is set to begin shipping samples of its silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) bare die by 14 November.
The new component is designed to enhance energy efficiency in electric vehicles (EVs), plug-in hybrid vehicles (PHEVs), and other electric mobility solutions.
The SiC MOSFET bare die incorporates Mitsubishi Electric’s proprietary manufacturing technologies, including a gate oxide film process that minimizes power loss and on-resistance fluctuations.
This process results in a 50% reduction in power loss compared to conventional planar devices. The component also uses oblique ion implantation, which helps lower switching loss, further optimizing its performance.
The wide bandgap SiC-based MOSFET is expected to support the decarbonisation efforts of the automotive industry by improving the energy efficiency and driving range of EVs.
The product will be available in two models, the WF0009Q-1200AA and WF0008Q-0750AA, both of which meet the RoHS (Restriction of the Use of Certain Hazardous Substances) directive.
