Infineon Technologies has unveiled a new generation of high-voltage power semiconductors designed to significantly enhance the efficiency, performance, and power density of electric vehicles (EVs) and plug-in hybrids. The new product lineup includes third-generation Electric Drive Train (EDT3) chips and Reverse Conducting Insulated Gate Bipolar Transistors (RC-IGBTs), both engineered to meet the evolving demands of modern EV architectures, including 800-volt systems.
The high-voltage IGBTs play a crucial role in EV propulsion by converting the DC voltage from a battery into AC voltage needed to power electric motors. RC-IGBTs, which integrate both the transistor and a freewheeling diode onto a single chip, enable a more compact design, reduce switching losses, and improve thermal management. Meanwhile, the EDT3 chips represent a significant upgrade over their EDT2 predecessors, incorporating advanced temperature and current monitoring sensors to deliver improved energy efficiency and range.
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According to Infineon, EDT3 chips can reduce energy losses by up to 20% under high load conditions while maintaining consistent efficiency during partial load operation. With a higher thermal toleranceāup to 185Ā°Cāand dielectric strength options of 750 or 1,200 volts, these chips are well suited for use in main traction inverters. The enhancements translate into lower energy consumption, less heat generation, improved vehicle range, and potential cost savings for automakers.
The new RC-IGBT chips, particularly those rated for 1,200 volts, are tailored for high-performance EVs utilizing 800-volt platforms. They offer greater current density and reduced material usage, which further drives down costs and simplifies system integration.
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Leadrive, a Chinese supplier of silicon carbide power modules backed by Volvo Cars, has expressed strong support for the new chip generation. āInfineon, as Leadriveās primary IGBT chip supplier and partner, consistently provides us with innovative solutions that deliver system-level benefits,ā said Dr. Jie Shen, founder and General Manager of Leadrive. āThe latest EDT3 chips have optimized losses and loss distribution, support higher operating temperatures, and offer multiple metallization options. These features not only reduce the silicon area per ampere, but also accelerate the adoption of advanced packaging technologies.ā
Infineon says all new chips are compatible with customized power module designs, including its HybridPACK Drive G2, capable of supporting power outputs of up to 250 kW. Both EDT3 and RC-IGBT components are now available as samples for evaluation by automotive manufacturers.