Geely has announced a collaboration with European chipmaker STMicroelectronics for the supply of Silicon Carbide (SiC) power chips. The agreement reflects Geely’s commitment to enhancing its electric vehicle (EV) offerings with advanced semiconductor technology.
STMicroelectronics and Geely have entered a long-term supply agreement for SiC devices, aiming to bolster their partnership in this field. The agreement includes the supply of SiC power devices for Geely’s mid-range and high-end all-electric vehicles across multiple brands, with a focus on improving vehicle performance, accelerating charging speeds, and extending driving range.
Additionally, the partnership will see the establishment of an innovation joint lab, facilitating collaboration in automotive electronic/electrical (E/E) architecture, in-vehicle infotainment, smart cockpit systems, ADAS (Advanced Driver Assistance System), and new energy vehicles (NEVs).
Geely Auto Group’s electric drive inverters have already integrated third-generation SiC MOSFET devices from STMicro, showcasing the importance of this technology in enhancing energy efficiency.
The SiC module, an upgrade from the conventional IGBT (Insulated Gate Bipolar Transistor Chip) module, represents the third generation of power semiconductors, offering higher efficiency and improved resistance to high temperatures and voltages. This advancement enables the upgrade of NEVs’ voltage platform from 400 V to a higher 800 V, resulting in enhanced energy efficiency performance.
STMicroelectronics’ strong presence in the global SiC MOSFET market, holding more than 50 percent share, underscores its expertise and capability in supplying advanced semiconductor solutions for electric vehicles. The company’s recent ventures in China, including a joint venture with Sanan Optoelectronics and a supply agreement with Li Auto, further demonstrate its commitment to the Chinese EV market.
