BASF has introduced Ultramid Advanced N3U41 G6, a new polyphthalamide (PPA) specifically engineered for insulated-gate bipolar transistor (IGBT) semiconductor housings.
This development caters to the growing demand for high-performance, reliable electronic components in sectors such as electric vehicles, renewable energy systems, and smart manufacturing.
Semikron Danfoss, a global leader in power electronics, has adopted BASF’s PPA for its Semitrans 10 IGBT module, which is used in inverters for photovoltaic and wind energy systems. The PPA enhances the robustness and reliability of IGBTs, which are essential for efficient power switching and energy-saving performance.
“IGBTs are a key element of modern electronics, particularly in the renewable energy sector. IGBTs must operate at higher temperatures while maintaining long-term stability and performance,” said Jörn Grossmann from research and predevelopment at Semikron Danfoss. “The Semitrans 10 has set a new benchmark for performance and efficiency benefiting from the unique properties of BASF’s PPA. We chose this material because of its extraordinary electrical isolation even in harsh environments and because of its excellent robustness against short-term temperature peaks in the assembly process.”
BASF’s Ultramid Advanced N3U41 G6 meets the stringent demands of next-generation IGBTs, offering superior thermal stability, low water uptake, and high electrical insulation, crucial for electronics in harsh environments.
The material’s high Comparative Tracking Index (CTI) of 600 supports the miniaturization of power components, offering better insulation and reducing creepage distances.
