Infineon Austria is spearheading a groundbreaking research project in the European Union called ALL2GaN, aimed at harnessing the energy-saving potential of highly efficient power semiconductors made of gallium nitride (GaN) for seamless integration into various applications.
The project, known as “Affordable smart GaN IC solutions for greener applications” (ALL2GaN), envisions a remarkable reduction of energy losses by an estimated average of 30 percent with the introduction of the new GaN chip generation. This advancement is expected to yield substantial benefits for onboard chargers and mobile charging applications.
Comprising a consortium of 45 partners from twelve countries, the ALL2GaN project boasts a total budget of approximately 60 million euros. Over the course of three years, it will be financed through investments from industry stakeholders, subsidies from participating nations, and support from the European research program, Key Digital Technologies.
Gallium nitride, much like silicon carbide (SiC), is renowned for its ability to convert energy with exceptional efficiency. “GaN technologies are revolutionizing applications that contribute to decarbonization. Mobile charging, data center power supplies, residential solar inverters, and electric vehicle onboard chargers are among the groundbreaking applications,” explains Adam White, Division President, Power and Sensor Systems at Infineon Technologies AG. “With the All2GaN research project, energy-saving chips based on gallium nitride can be developed more swiftly and seamlessly integrated into a wide range of applications thanks to the integration toolbox. This research endeavor unlocks vast application potential and yields sustainable benefits.”
Infineon-Villach has already succeeded in developing cost-efficient GaN chips. The primary objective of ALL2GaN is to facilitate the integration of these novel semiconductors, manufactured in Europe. To achieve this, the chips will be constructed in a modular fashion and seamlessly integrated into various applications using an integration toolbox. Infineon’s research spans from individual chip elements and high-performance GaN modules to chip designs and innovative system-on-chip approaches.
Recognizing the immense potential of GaN, other companies have also embarked on initiatives in this field. German supplier Vitesco collaborated with Canadian specialist GaN Systems in November 2021, citing the cost-effectiveness of GaN semiconductors compared to SiC semiconductors in terms of system performance. Renault partnered with Swiss company STMicroelectronics, which is actively involved in GaN technology research. Additionally, Toshiba Electronics Europe recently inaugurated a new high-voltage laboratory at its Düsseldorf site in Germany, focusing on silicon carbide and gallium nitride developments.
The ALL2GaN project signifies a significant stride forward in advancing the integration of gallium nitride semiconductors, promising enhanced energy efficiency across numerous applications. With its potential to revolutionize various sectors, GaN technology stands at the forefront of decarbonization efforts, paving the way for a greener and more sustainable future.
